APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 1-8 q1 to q4 absolute maximum ratings symbol parameter max ratings unit v ces collector - emitter breakdown voltage 600 v t c = 25c 42 i c continuous collector current t c = 80c 30 i cm pulsed collector current t c = 25c 100 a v ge gate ? emitter voltage 20 v p d maximum power dissipation t c = 25c 140 w rbsoa reverse bias safe operating area t j = 125c 60a@500v these devices are sens itive to electrostatic discharge. prope r handling procedures should be follow ed. see application note apt0502 on www.microsemi.com 16 15 18 20 23 22 13 11 12 14 8 7 29 30 28 27 26 3 32 31 10 19 2 25 4 all multiple inputs and outputs must be shorted together example: 10/11/12 ; 7/8 ? v ces = 600v i c = 30a @ tc = 80c application ? solar converter ? uninterruptible power supplies features ? non punch through (npt) fast igbt - low voltage drop - low tail current - switching frequency up to 100 khz - soft recovery parallel diodes - low diode vf - low leakage current - rbsoa and scsoa rated ? kelvin emitter for easy drive ? very low stray inductance ? high level of integration ? internal thermistor fo r temperature monitoring benefits ? stable temperature behavior ? very rugged ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? easy paralleling due to positive tc of vcesat ? low profile ? rohs compliant three level inverter npt igbt power module
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 2-8 all ratings @ t j = 25c unless otherwise specified q1 to q4 electrical characteristics symbol characteristic test conditions min typ max unit t j = 25c 250 i ces zero gate voltage collector current v ge = 0v v ce = 600v t j = 125c 500 a t j = 25c 1.7 2.0 2.45 v ce(on) collector emitter on voltage v ge =15v i c = 30a t j = 125c 2.2 v v ge(th) gate threshold voltage v ge = v ce , i c = 1ma 4 6 v i ges gate ? emitter leakage current v ge = 20v, v ce = 0v 400 na q1 to q4 dynamic characteristics symbol characteristic test conditions min typ max unit c ies input capacitance 1350 c oes output capacitance 193 c res reverse transfer capacitance v ge = 0v v ce = 25v f = 1mhz 120 pf q g total gate charge 99 q ge gate ? emitter charge 10 q gc gate ? collector charge v ge = 15v v bus = 300v i c =30a 60 nc t d(on) turn-on delay time 30 t r rise time 12 t d(off) turn-off delay time 80 t f fall time inductive switching (25c) v ge = 15v v bus = 400v i c = 30a r g = 6.8 15 ns t d(on) turn-on delay time 32 t r rise time 12 t d(off) turn-off delay time 90 t f fall time inductive switching (125c) v ge = 15v v bus = 400v i c = 30a r g = 6.8 21 ns e on turn-on switching energy t j = 125c 0.3 e off turn-off switching energy v ge = 15v v bus = 400v i c = 30a r g = 6.8 t j = 125c 0.8 mj i sc short circuit data v ge 15v ; v bus = 360v t p 10s ; t j = 125c 135 a r thjc junction to case thermal resistance 0.9 c/w
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 3-8 cr1 to cr6 diode ratings and characteristics symbol characteristic test conditions min typ max unit v rrm maximum peak repetitive reverse voltage 600 v t j = 25c 25 i rm maximum reverse leakage current v r =600v t j = 150c 500 a i f dc forward current tc = 80c 30 a i f = 30a 1.8 2.2 i f = 60a 2.2 v f diode forward voltage i f = 30a t j = 125c 1.5 v t j = 25c 25 t rr reverse recovery time t j = 125c 160 ns t j = 25c 35 q rr reverse recovery charge i f = 30a v r = 400v di/dt =200a/s t j = 125c 480 nc e rr reverse recovery energy i f = 30a v r = 400v di/dt =1000a/s t j = 125c 0.6 mj r thjc junction to case thermal resistance 1.2 c/w temperature sensor ntc (see application note apt0406 on www.micr osemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? r 25 /r 25 5 % b 25/85 t 25 = 298.15 k 3952 k ? b/b t c =100c 4 % ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 thermal and package characteristics symbol characteristic min typ max unit v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 110 g t: thermistor temperature r t : thermistor value at t
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 4-8 sp3 package outline (dimensions in mm) 17 12 28 1 see application note 1901 - mounting instructions for sp3 power modules on www.microsemi.com
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 5-8 q1 to q4 typical performance curve output characteristics (v ge =15v) t j =25c t j =125c 0 10 20 30 40 50 60 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle transfer characteristics t j =25c t j =125c 0 20 40 60 80 012345678910 v ge , gate to emitter voltage (v) ic, collector current (a) 250s pulse test < 0.5% duty cycle 0.80 0.90 1.00 1.10 1.20 25 50 75 100 125 t j , junction temperature (c) collector to emitter breakdown voltage (normalized) breakdown voltage vs junction temp. 0 10 20 30 40 50 25 50 75 100 125 150 t c , case temperature (c) ic, dc collector current (a) dc collector current vs case temperature gate charge v ce =120v v ce =300v v ce =480v 0 2 4 6 8 10 12 14 16 18 0 20406080100120 gate charge (nc) v ge , gate to emitter voltage (v) i c = 30a t j = 25c output characteristics (v ge =10v) t j =25c t j =125c 0 12.5 25 37.5 50 01234 ic, collector current (a) v ce , collector to emitter voltage (v) 250s pulse test < 0.5% duty cycle
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 6-8 v ge = 15v 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) td(on), turn-on delay time (ns) turn-on delay time vs collector current tj = 125c v ce = 400v r g = 6.8 ? v ge =15v, t j =25c v ge =15v, t j =125c 25 50 75 100 125 0 10 20 30 40 50 60 70 i ce , collector to emitter current (a) td(off), turn-off delay time (ns) turn-off delay time vs collector current v ce = 400v r g = 6.8 ? v ge =15v, t j =125c 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tr, rise time (ns) current rise time vs collector current v ce = 400v r g = 6.8 ? t j = 25c t j = 125c 0 10 20 30 40 50 0 10203040506070 i ce , collector to emitter current (a) tf, fall time (ns) current fall time vs collector current v ce = 400v, v ge = 15v, r g = 6.8 ? t j =125c, v ge =15v 0 0.25 0.5 0.75 1 0 10203040506070 i ce , collector to emitter current (a) e on , turn-on energy loss (mj) turn-on energy loss vs collector current v ce = 400v r g = 6.8 ? t j = 125c 0 0.5 1 1.5 2 0 10203040506070 i ce , collector to emitter current (a) e off , turn-off energy loss (mj) turn-off energy loss vs collector current v ce = 400v v ge = 15v r g = 6.8 ? eon, 30a eoff, 30a 0 0.25 0.5 0.75 1 0 5 10 15 20 25 gate resistance (ohms) switching energy losses vs gate resistance switching energy losses (mj) v ce = 400v v ge = 15v t j = 125c 0 10 20 30 40 50 60 70 0 100 200 300 400 500 600 i c , collector current (a) reverse bias safe operating area v ce , collector to emitter voltage (v)
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 7-8 cies cres coes 10 100 1000 10000 0 1020304050 c, capacitance (pf) capacitance vs collector to emitter voltage v ce , collector to emitter voltage (v) 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration operating frequency vs collector current hard switching 0 40 80 120 160 200 240 0 1020304050 i c , collector current (a) f max , operating frequency (khz) v ce = 400v d = 50% r g = 6.8 ? t j = 125c t c = 75c
APTGF30TL60T3G APTGF30TL60T3G ? rev 0 march, 2009 www.microsemi.com 8-8 cr1 to cr6 typical performance curve forward characteristic of diode t j =25c t j =125c 0 20 40 60 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 v f (v) i f (a) energy losses vs collector current 0 0.25 0.5 0.75 1 0 20406080 i c (a) e (mj) v ce = 400v v ge = 15v r g = 2.5 ? t j = 125c 0 0.25 0.5 0.75 1 0246810 gate resistance (ohms) e (mj) v ce = 400v v ge =15v i c = 30a t j = 125c switching energy losses vs gate resistance maximum effective transient thermal impedance, junction to case vs pulse duration 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.2 0.4 0.6 0.8 1 1.2 1.4 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) microsemi reserves the right to change, without notice , the specifications and information contained herein microsemi's products are covered by one or more of u.s patents 4, 895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,8 86 6,939,743 7,342,262 and foreign patents. u.s and foreign patents pending. all rights reserved.
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